- RS stock no.:
- 795-9209
- Mfr. Part No.:
- STGW39NC60VD
- Manufacturer:
- STMicroelectronics
On back order for despatch 2025/03/28
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Pack of 2)
R 109,24
(exc. VAT)
R 125,63
(inc. VAT)
Units | Per unit | Per Pack* |
2 - 2 | R 109,24 | R 218,48 |
4 - 8 | R 106,51 | R 213,02 |
10 - 18 | R 103,315 | R 206,63 |
20 - 48 | R 99,18 | R 198,36 |
50 + | R 95,215 | R 190,43 |
*price indicative |
- RS stock no.:
- 795-9209
- Mfr. Part No.:
- STGW39NC60VD
- Manufacturer:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 80 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 250 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.75 x 5.15 x 20.15mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
- RS stock no.:
- 795-9209
- Mfr. Part No.:
- STGW39NC60VD
- Manufacturer:
- STMicroelectronics