- RS stock no.:
- 792-5802
- Mfr. Part No.:
- STGW60H65DFB
- Manufacturer:
- STMicroelectronics
On back order for despatch 2025/04/29
Not Available for premium delivery
Added
Price (Excl VAT) Each
R 118,28
(exc. VAT)
R 136,02
(inc. VAT)
Units | Per unit |
1 - 24 | R 118,28 |
25 - 99 | R 115,32 |
100 - 249 | R 111,86 |
250 + | R 107,39 |
- RS stock no.:
- 792-5802
- Mfr. Part No.:
- STGW60H65DFB
- Manufacturer:
- STMicroelectronics
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 80 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 375 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.75 x 5.15 x 20.15mm |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |