Infineon IKW50N60TFKSA1 IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole

RS stock no.:: 754-5409
Mfr. Part No.:: IKW50N60TFKSA1
Manufacturer:: Infineon

Infineon IKW50N60TFKSA1 IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole

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Usually in stock

Not Available for premium delivery

Added

Price (Excl VAT) Each

R 64,56

(exc. VAT)

R 74,24

(inc. VAT)

Units	Per unit
1 - 24	R 64,56
25 - 99	R 62,95
100 - 239	R 61,06
240 - 479	R 58,62
480 +	R 56,28

RS stock no.:: 754-5409
Mfr. Part No.:: IKW50N60TFKSA1
Manufacturer:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specification

Attribute	Value
Maximum Continuous Collector Current	100 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	333 W
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Dimensions	16.03 x 21.1 x 5.16mm
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-40 °C

RS stock no.:: 754-5409
Mfr. Part No.:: IKW50N60TFKSA1
Manufacturer:: Infineon