- RS stock no.:
- 739-4945P
- Mfr. Part No.:
- FGH60N60SMD
- Manufacturer:
- onsemi
122 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Price (Excl VAT) Each (Supplied in a Tube)
R 168.53
(exc. VAT)
R 193.81
(inc. VAT)
units | Per unit |
10 - 49 | R 168.53 |
50 - 99 | R 163.47 |
100 - 249 | R 156.93 |
250 + | R 150.65 |
- RS stock no.:
- 739-4945P
- Mfr. Part No.:
- FGH60N60SMD
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 120 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 600 W |
Package Type | TO-247AB |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.6 x 4.7 x 20.6mm |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |