DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247, Through Hole

RS stock no.:: 182-6868
Mfr. Part No.:: DGTD120T25S1PT
Manufacturer:: DiodesZetex

DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247, Through Hole

300 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Added

Price (Excl VAT) Each (On a Reel of 30)

R 127,831

(exc. VAT)

R 147,006

(inc. VAT)

Units	Per unit	Per Reel*
30 - 60	R 127,831	R 3 834,93
90 - 120	R 124,635	R 3 739,05
150 +	R 120,896	R 3 626,88
*price indicative

RS stock no.:: 182-6868
Mfr. Part No.:: DGTD120T25S1PT
Manufacturer:: DiodesZetex

Technical data sheets

Datasheet DGTD120T25S1PT

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

The DGTD120T25S1PT is produced using advanced Field Stop Trench IGBT Technology, which provides low VCE(sat), excellent quality and high-switching performance.

High Speed Switching & Low VCE(sat) Loss
VCE(sat) = 2.0V @ IC = 25A
High Input Impedance
trr = 100ns (typ) @ diF/dt = 500A/μs
Ultra-Soft, Fast Recovery Anti-parallel Diode
Ultra Narrowed VF Distribution Control
Positive Temperature Coefficient For Easy Parallelling
Maximum Junction Temperature 175°C
Lead-free finish
Halogen and Antimony Free. “Green” Device
Applications
Motor Drive
UPS
Welder
Solar Inverter
IH Cooker

Specification

Attribute	Value
Maximum Continuous Collector Current	50 A, 100 (Pulsed) A
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±20V
Number of Transistors	1
Maximum Power Dissipation	348 W
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Dimensions	16.26 x 5.31 x 21.46mm
Gate Capacitance	3942pF
Minimum Operating Temperature	-40 °C
Maximum Operating Temperature	+175 °C

RS stock no.:: 182-6868
Mfr. Part No.:: DGTD120T25S1PT
Manufacturer:: DiodesZetex

Datasheet DGTD120T25S1PT