MOSFET Vishay SIA537EDJ-T1-GE3
- RS stock no.:
- 180-7808
- Mfr. Part No.:
- SIA537EDJ-T1-GE3
- Manufacturer:
- Vishay
On back order for despatch 2025/07/18
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Pack of 20)
R 11,777
(exc. VAT)
R 13,544
(inc. VAT)
| Units | Per unit | Per Pack* |
| 20 - 20 | R 11,777 | R 235,54 |
| 40 - 80 | R 11,482 | R 229,64 |
| 100 - 480 | R 11,138 | R 222,76 |
| 500 - 980 | R 10,692 | R 213,84 |
| 1000 + | R 10,265 | R 205,30 |
| *price indicative | ||
- RS stock no.:
- 180-7808
- Mfr. Part No.:
- SIA537EDJ-T1-GE3
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
The Vishay SIA537EDJ is a P&N-channel MOSFET having drain to source voltage(Vds) of -20V for P-channel and 12V for N-channel. Gate to source voltage (VGS) 8V. It is having Power PAK SC-70 package. It is offers drain to source resistance (RDS.) of 0.028ohms at 4.5VGS and 0.033ohms at 2.5VGS. for N-channel and 0.054ohms, 0.07 for P-channel resp. Maximum drain current 4.5A for N-channel and -4.5 for P-channel.
Trench FET power MOSFETs
Typical ESD protection: N-channel 2400 V, P-channel 2000 V
100 % Rg tested
Typical ESD protection: N-channel 2400 V, P-channel 2000 V
100 % Rg tested