MOSFET Vishay SI7119DN-T1-GE3
- RS stock no.:
- 180-7307
- Mfr. Part No.:
- SI7119DN-T1-GE3
- Manufacturer:
- Vishay
6000 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each (On a Reel of 3000)
R 7,498
(exc. VAT)
R 8,623
(inc. VAT)
| Units | Per unit | Per Reel* |
| 3000 - 3000 | R 7,498 | R 22 494,00 |
| 6000 - 9000 | R 7,311 | R 21 933,00 |
| 12000 + | R 7,092 | R 21 276,00 |
| *price indicative | ||
- RS stock no.:
- 180-7307
- Mfr. Part No.:
- SI7119DN-T1-GE3
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Vishay MOSFET
The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 200V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 1050mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 52W and continuous drain current of 3.8A. This product has been optimized for lower switching and conduction losses. It has applications in the active clamp in intermediate DC/DC power supplies. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Low thermal resistance powerpak package with small size and low 1.07 mm profile
• Maximum dissipation power 52W
• Operating temperature ranges between -50°C and 150°C
• TrenchFET power MOSFET
• Low thermal resistance powerpak package with small size and low 1.07 mm profile
• Maximum dissipation power 52W
• Operating temperature ranges between -50°C and 150°C
• TrenchFET power MOSFET
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested