- RS stock no.:
- 168-8740
- Mfr. Part No.:
- STGWT80H65DFB
- Manufacturer:
- STMicroelectronics
On back order for despatch 2025/04/04
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Tube of 30)
R 121,962
(exc. VAT)
R 140,256
(inc. VAT)
Units | Per unit | Per Tube* |
30 + | R 121,962 | R 3 658,86 |
*price indicative |
- RS stock no.:
- 168-8740
- Mfr. Part No.:
- STGWT80H65DFB
- Manufacturer:
- STMicroelectronics
Legislation and Compliance
- COO (Country of Origin):
- KR
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 120 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 469 W |
Package Type | TO-3P |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.8 x 5 x 20.1mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +175 °C |