- RS stock no.:
- 168-8615
- Mfr. Part No.:
- STGP3HF60HD
- Manufacturer:
- STMicroelectronics
150 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Price (Excl VAT) Each (In a Tube of 50)
R 18.715
(exc. VAT)
R 21.522
(inc. VAT)
units | Per unit | Per Tube* |
50 - 700 | R 18.715 | R 935.75 |
750 - 1950 | R 18.248 | R 912.40 |
2000 + | R 17.70 | R 885.00 |
*price indicative |
- RS stock no.:
- 168-8615
- Mfr. Part No.:
- STGP3HF60HD
- Manufacturer:
- STMicroelectronics
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 7.5 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 38 W |
Package Type | TO-220 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.4 x 4.6 x 15.75mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |