STMicroelectronics STGW30NC120HD IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 168-7744
- Mfr. Part No.:
- STGW30NC120HD
- Manufacturer:
- STMicroelectronics
On back order for despatch 2025/02/05
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Tube of 30)
R 90,004
(exc. VAT)
R 103,505
(inc. VAT)
| Units | Per unit | Per Tube* |
| 30 + | R 90,004 | R 2 700,12 |
| *price indicative | ||
- RS stock no.:
- 168-7744
- Mfr. Part No.:
- STGW30NC120HD
- Manufacturer:
- STMicroelectronics
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 220 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |