- RS stock no.:
- 124-1334
- Mfr. Part No.:
- FGH40N60SFDTU
- Manufacturer:
- onsemi
30 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Price (Excl VAT) Each (In a Tube of 30)
R 76.469
(exc. VAT)
R 87.939
(inc. VAT)
units | Per unit | Per Tube* |
30 - 30 | R 76.469 | R 2,294.07 |
60 - 120 | R 74.557 | R 2,236.71 |
150 - 270 | R 72.321 | R 2,169.63 |
300 - 570 | R 69.428 | R 2,082.84 |
600 + | R 66.651 | R 1,999.53 |
*price indicative |
- RS stock no.:
- 124-1334
- Mfr. Part No.:
- FGH40N60SFDTU
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 80 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 290 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.6 x 4.7 x 20.6mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |