- RS stock no.:
- 168-4618
- Mfr. Part No.:
- 2MBI300U4H-120-50
- Manufacturer:
- Fuji Electric
Discontinued product
- RS stock no.:
- 168-4618
- Mfr. Part No.:
- 2MBI300U4H-120-50
- Manufacturer:
- Fuji Electric
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 300 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 1.47 kW |
Package Type | M249 |
Configuration | Series |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 7 |
Transistor Configuration | Series |
Dimensions | 108 x 62 x 30mm |
Maximum Operating Temperature | +150 °C |