- RS stock no.:
- 125-8046
- Mfr. Part No.:
- IXGN320N60A3
- Manufacturer:
- IXYS
14 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Price (Excl VAT) Each
R 749.73
(exc. VAT)
R 862.19
(inc. VAT)
units | Per unit |
1 - 1 | R 749.73 |
2 - 4 | R 730.99 |
5 - 9 | R 709.06 |
10 - 19 | R 680.70 |
20 + | R 653.47 |
- RS stock no.:
- 125-8046
- Mfr. Part No.:
- IXGN320N60A3
- Manufacturer:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 320 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 735 W |
Configuration | Single |
Package Type | SOT-227B |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 4 |
Switching Speed | 5kHz |
Transistor Configuration | Common Emitter |
Dimensions | 38.23 x 25.07 x 9.6mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |