Cypress Semiconductor, FM24CL04B-G

Technical data sheets
Legislation and Compliance
Compliant
COO (Country of Origin): US
Product Details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Specification
Attribute Value
Memory Size 4kbit
Organisation 512 x 8 bit
Interface Type I2C
Data Bus Width 8bit
Mounting Type Surface Mount
Package Type SOIC
Pin Count 8
Dimensions 4.97 x 3.98 x 1.48mm
Length 4.97mm
Width 3.98mm
Maximum Operating Supply Voltage 3.65 V
Height 1.48mm
Maximum Operating Temperature +85 °C
Minimum Operating Supply Voltage 2.7 V
Minimum Operating Temperature -40 °C
Number of Bits per Word 8bit
Automotive Standard AEC-Q100
Number of Words 512
1067 Available in 4-6 working days for collection or delivery to major cities, unless heavy, bulky, hazardous or lithium metal (T&C’s Apply)
Price (Excl VAT) Each (In a Tube of 97)
R 21.389
(exc. VAT)
R 24.597
(inc. VAT)
units
Per unit
Per Tube*
97 - 97
R 21.389
R 2,074.733
194 - 194
R 20.961
R 2,033.217
291 - 485
R 20.333
R 1,972.301
582 - 970
R 19.519
R 1,893.343
1067 +
R 18.739
R 1,817.683
*price indicative
Not Available for premium delivery