Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Attribute | Value |
---|---|
Memory Size | 64kbit |
Organisation | 8k x 8 bit |
Interface Type | I2C |
Data Bus Width | 8bit |
Mounting Type | Surface Mount |
Package Type | SOIC |
Pin Count | 8 |
Dimensions | 4.97 x 3.98 x 1.48mm |
Length | 4.97mm |
Maximum Operating Supply Voltage | 5.5 V |
Width | 3.98mm |
Height | 1.48mm |
Maximum Operating Temperature | +85 °C |
Automotive Standard | AEC-Q100 |
Minimum Operating Temperature | -40 °C |
Number of Bits per Word | 8bit |
Number of Words | 8k |
Minimum Operating Supply Voltage | 4.5 V |