Cypress Semiconductor FM25L04B-DG Serial-SPI FRAM Memory, 4kbit 8-Pin DFN

Technical data sheets
Legislation and Compliance
Compliant
Product Details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Specification
Attribute Value
Memory Size 4kbit
Organisation 512 x 8 bit
Interface Type Serial-SPI
Mounting Type Surface Mount
Package Type DFN
Pin Count 8
Dimensions 4.5 x 4 x 0.7mm
Length 4.5mm
Width 4mm
Maximum Operating Supply Voltage 3.6 V
Height 0.7mm
Maximum Operating Temperature +85 °C
Minimum Operating Temperature -40 °C
Number of Words 512
Automotive Standard AEC-Q100
Number of Bits per Word 8bit
Minimum Operating Supply Voltage 2.7 V
162 Available in 4-6 working days for collection or delivery to major cities, unless heavy, bulky, hazardous or lithium metal (T&C’s Apply)
Price (Excl VAT) Each (In a Tube of 81)
R 23.616
(exc. VAT)
R 27.158
(inc. VAT)
units
Per unit
Per Tube*
81 +
R 23.616
R 1,912.896
*price indicative
Not Available for premium delivery