Cypress Semiconductor FM28V100-TG Parallel FRAM Memory, 1Mbit, 60ns 32-Pin TSOP

Technical data sheets
Legislation and Compliance
Compliant
COO (Country of Origin): US
Product Details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Specification
Attribute Value
Memory Size 1Mbit
Organisation 128K x 8 bit
Interface Type Parallel
Maximum Random Access Time 60ns
Mounting Type Surface Mount
Package Type TSOP
Pin Count 32
Dimensions 11.9 x 8.1 x 1.05mm
Length 11.9mm
Width 8.1mm
Maximum Operating Supply Voltage 3.6 V
Height 1.05mm
Maximum Operating Temperature +85 °C
Number of Words 128K
Number of Bits per Word 8bit
Minimum Operating Temperature -40 °C
Minimum Operating Supply Voltage 2 V
234 Available in 4-6 working days for collection or delivery to major cities, unless heavy, bulky, hazardous or lithium metal (T&C’s Apply)
Price (Excl VAT) Each (In a Tray of 234)
R 280.237
(exc. VAT)
R 322.273
(inc. VAT)
units
Per unit
Per Tray*
234 +
R 280.237
R 65,575.458
*price indicative
Not Available for premium delivery