Cypress Semiconductor 2Mbit Parallel FRAM Memory 44-Pin TSOP, FM21L16-60-TG
- RS stock no.:
- 716-5729
- Mfr. Part No.:
- FM21L16-60-TG
- Manufacturer:
- Cypress Semiconductor
Unavailable
RS will no longer stock this product.
- RS stock no.:
- 716-5729
- Mfr. Part No.:
- FM21L16-60-TG
- Manufacturer:
- Cypress Semiconductor
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Cypress Semiconductor | |
| Memory Size | 2Mbit | |
| Organisation | 128K x 16 bit | |
| Interface Type | Parallel | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 60ns | |
| Mounting Type | Surface Mount | |
| Package Type | TSOP | |
| Pin Count | 44 | |
| Dimensions | 18.41 x 10.16 x 1.20mm | |
| Length | 18.41mm | |
| Width | 10.16mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Height | 1.2mm | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Minimum Operating Temperature | -40 °C | |
| Number of Words | 128K | |
| Number of Bits per Word | 16bit | |
| Select all | ||
|---|---|---|
Brand Cypress Semiconductor | ||
Memory Size 2Mbit | ||
Organisation 128K x 16 bit | ||
Interface Type Parallel | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 60ns | ||
Mounting Type Surface Mount | ||
Package Type TSOP | ||
Pin Count 44 | ||
Dimensions 18.41 x 10.16 x 1.20mm | ||
Length 18.41mm | ||
Width 10.16mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Height 1.2mm | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Supply Voltage 2.7 V | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 128K | ||
Number of Bits per Word 16bit | ||
- COO (Country of Origin):
- TW
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.